DMN2010UDZ-7 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMN2010UDZ-7

Description:

MOSFET 2N-CH 20V 11A U-DFN2535-6

Stock:

22426

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.16

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Parameters

Current at 25 ° C - continuous drain (Id)

11A

Drain source voltage (Vdss)

24V

FET Type

2 N Channel(two)Co leakage

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

33.2nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

2665pF @ 10V

On resistance (maximum) for different Ids and Vgs

7 mΩ @ 5.5A,4.5V

Power - maximum

700mW

Vgs (th) (maximum) for different Ids

1.5V @ 250µA

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-UDFN Exposed Pad

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

DMN2010UDZ-7（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22426,Price reference "real-time change" China/Hongkong。 DMN2010UDZ-7 package/specs, Download DMN2010UDZ-7、Datasheet。